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DESCRIPTION. The PS2501-1, -4 and PS2501L-1, -4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor. The PS2501-1, -4 are in a plastic DIP (Dual In-line Package) and the PS2501L-1, -4 are lead bending type (Gull-wing) for surface mount. FEATURES. High isolation voltage (BV = 5 000 Vr.m.s.)
DESCRIPTION. The PS2801-1 and PS2801-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic SSOP for high density applications. This package has shield effect to cut off ambient light. FEATURES. High isolation voltage (BV = 2 500 Vr.m.s.)
The ISL73007SEH is a radiation hardened point-of-load buck regulator that provides up to 3A of output current capability with an input voltage ranging from 3V to 18V.
The ISL71710M is the fastest isolator of its type, with a 150Mbps typical data rate. The symmetric magnetic coupling barrier provides a typical propagation delay of only 10ns and a pulse-width distortion as low as 0.3ns, achieving the best specifications of any isolator.
The ISL7124SRH, ISL7124SEH have been specifically designed and manufactured to provide highly reliable performance in harsh radiation environments. They are total dose hardened to 300krad (Si) and offer guaranteed performance over the full -55°C to +125°C military temperature range.
The ISL2110, ISL2111 are 100V, high frequency, half-bridge N-Channel power MOSFET driver ICs. They are based on the popular HIP2100, HIP2101 half-bridge drivers, but offer several performance improvements.
Features. The ISL70020SEH is a 40V N-channel enhancement mode GaN power transistor. This GaN FET has been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for this device include commercial aerospace, medical, and nuclear power generation.
