搜尋結果
2019年6月6日 · SSD耐久性的衡量标准之一是平均故障间隔时间（MTBF），即两次故障之间的间隔时间。. MTBF以小时表示，大多数工业SSD的MTBF额定值在200万小时（约228 年），或500万小时或570年。. 其他衡量耐用性的方法包括：兆兆字节写入量（TBW），它指的是在整个SSD使用 ...
- Introduction to Over-Provisioning
- How Over-Provisioning Impacts SSD’s Performance
- Conclusion
In the past few decades, flash-based SSDs have sparked a revolution in storage devices. Unlike traditional electro-mechanical hard disk drives (HDDs) that use magnetic disks for storage, SSDs are made from an array of solid-state electronic storage chips, consisting of control units and storage cells (i.e., NAND flash chips, DRAM chips), thereby of...
The garbage collection can severely impact SSD performance when it is near saturation with writes. To cope with this problem, over-provisioning provides additional space for the garbage collection process without heavily impacting the performance. The following two graphsshow the variation in peak performance and overall performance of a 256 GB SAT...
Over-provisioning contributes to improving the endurance and write performance of the SSD, but it will reduce the user capacity; therefore, it is important to allocate an optimum amount of OP depending on the application. For write-intensive workloads, it is beneficial to compromise a certain portion of capacity for a significantly improved enduran...
2021年6月29日 · The integrity of devices and data is constantly threatened by unplanned power outages and high operating temperatures. SSDs continue to function dependably and maintain data integrity according to ATP's Four-Corner, Temperature Cycling, and Power Cycling testing.
2019年6月6日 · Error Detection and Correction in NAND Flash Memory. The current age of information underscores the need, not only of speed but also of accuracy, whether one is storing, retrieving, transmitting or analyzing data. Considering the amount of critical information being generated by the minute, even the slightest of errors can spell disaster.
2019年6月6日 · NAND闪存性能下降和位错误. 纠错码用于检测和纠正位错误。 在闪存的早期，使用了个位错误代码，但是随着比例缩放变得越来越普遍，单元的大小减小了，每个单元的比特数增加了。 以下因素影响闪存性能下降和误码率的上升。 编程/擦除（P / E）周期。 编程 (写入)和擦除的恒定周期要求对NAND单元施加高压，从而在隧穿氧化层上造成应力并削弱隧穿氧化层。 图1. NAND闪存单元上的编程（写入）和擦除操作需要施加高电压，这会在隧道氧化物上产生应力。 随着P / E周期的增加，隧穿氧化层变弱，导致电子从浮栅泄漏，而NAND闪存单元性能下降. 每个单元拥有更多位。
2023年6月26日 · N601 系列是以最新 176層3D 快閃記憶體及主流 512 Gbit 顆粒包裝，突破低成本64層封裝技術各項弱勢，以達記憶體效能進化與性價比的優勢。. 新一代M.2 2280 固態硬碟提供容量240 GB以上到3.84 TB; U.2 固態硬碟提供容量960 GB到7.68 TB，對於不同需求應用端提供效能 ...
2020年11月11日 · To sustain SSD endurance, the main idea of Pseudo SLC is to make MLC/TLC function like SLC by storing only one data bit per cell instead of two or three.
