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- 857.00-8.00 (-0.92%)2024/05/30 06:57 臺灣股市 將在 2 小時 3 分鐘 期間開市 (報價延遲20分鐘)。
- 昨收865.00開盤861.00委買價0.00委賣價0.00
- 今日價格區間856.00 - 868.0052週價格區間516.00 - 878.00成交量34773 張平均成交量39233 張
- 市值22225.10 億本益比 (最近12個月)25.51營運報告/法說會日期2024-07-18除權除息日2024-06-13
相關股票
2022年8月3日 · TSMC in Tainan Science Park.JPG 2,048 × 1,536; 597 KB TSMC logo on Taichung factory building.jpg 3,928 × 2,208; 1.74 MB TSMC Mobile Recruiting Office in National Tsing Hua University.jpg 4,032 × 3,024; 4.34 MB
2020年6月26日 · File: TSMC factory in Taichung's Central Taiwan Science Park.jpg From Wikimedia Commons, the free media repository Jump to navigation Jump to search File File history File usage on Commons File usage on other wikis Metadata Size of this preview: 800 ×.
2020年6月26日 · File:TSMC logo on Taichung factory building.jpg. From Wikimedia Commons, the free media repository. File. File history. File usage on Commons. File usage on other wikis. Metadata. Size of this preview: 800 × 450 pixels. Other resolutions: 320 × 180 pixels | 640 × 360 pixels | 1,024 × 576 pixels | 1,280 × 720 pixels | 2,560 × ...
2023年2月3日 · TSM Logo.svg. Size of this PNG preview of this SVG file: 600 × 599 pixels. Other resolutions: 240 × 240 pixels | 480 × 480 pixels | 769 × 768 pixels | 1,025 × 1,024 pixels | 2,050 × 2,048 pixels | 991 × 990 pixels. Original file (SVG file, nominally 991 × 990 pixels, file size: 2 KB)
This page was last edited on 26 February 2024, at 20:17. Files are available under licenses specified on their description page. All structured data from the file namespace is available under the Creative Commons CC0 License; all unstructured text is available under the Creative Commons Attribution-ShareAlike License; additional terms may apply.
Media in category "Semiconductor fabrication plants". The following 28 files are in this category, out of 28 total. 200mm Wafer Fertigungslinie.JPG 1,600 × 1,200; 427 KB. Building of Taiwan Semiconductor Manufacturing Fab 12B at dusk1.jpg 7,213 × 4,814; 22.21 MB.
2022年12月2日 · Description. LDD-MOS transistor - CMOS with STI.svg. English: n-channel and p-channel MOSFET's in lightly doped drain (LDD) design. Individual transistors are electricaly separated by shallow trench isolation (STI) trenches. Deutsch: n-Kanal- und p-Kanal-MOSFETs mit LDD-Erweiterungen (LDD = lightly doped drain).