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What is strained Si?
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Strained silicon is a layer of silicon in which the silicon atoms are stretched beyond their normal interatomic distance. This can be accomplished by putting the layer of silicon over a substrate of silicon–germanium ( Si Ge ).
基本介绍. 播报. 编辑. 张力硅晶Strained Silicon技术并不是一项新的技术，这项技术的观念早在30年前就有科学家提出，在2001年6月8日由IBM正式发布。 我们知道，晶体管的基本作用. 张力硅晶技术. 就是根据需要，在“开”的状态下让电流尽可能大地通过，而在“关”的状态下则切断电流。 而实际上，目前晶体管的工作性能表现还无法完全达到这个理论上的水平，为尽量提高晶体管的工作效率，科学家们研究出了各种新技术，如有助于大幅提高晶体管电流切断的SOI（绝缘体上覆硅）技术。 和SOI相反，张力硅晶Strained Silicon技术则有助于晶体管在“开”的状态下大幅提高电流速度。 原理. 播报. 编辑.
2003年2月6日 · Strained silicon MOSFET technology Abstract: Mobility and current drive improvements associated with biaxial tensile stress in Si n- and p-MOSFETs are briefly reviewed. Electron mobility enhancements at high channel doping (up to 6 /spl times/ 10/sup 18/ cm/sup -3/) are characterized in strained Si n-MOSFETs.
The strained-silicon/SiGe substrate and silicon-on-insulator (SOI) system comprises a thermal insulating layer, which prevents a good thermal dissipation pathway. This gives rise to a highly nonequilibrium laser process and can vary significantly to that in normal bulk silicon substrate.
2003年7月1日 · A novel fabrication technique of ultrathin and relaxed SiGe buffer layers with high Ge fraction for sub 100 nm strained silicon on insulator MOSFETs
- K. Rim, R. Anderson, D. Boyd, F. Cardone, K. Chan, H. Chen, S. Christansen, J. Chu, K. Jenkins, T. K...
- 2003
Abstract: Strained Si is emerging as a technology vital to the continued progression of transistor performance laid out in the International Technology Roadmap for Semiconductors. Strained Si fundamentals are reviewed, as is the structure of optimized strained
2006年5月11日 · If strained silicon is the answer to the ‘silicon problem’, it could potentially remove the bottleneck in modern computers by rplacing electronic components with much faster optical...
